Si531差分晶振|6G無線網絡晶振|531FC156M250DG|Silicon低電流振蕩器，尺寸7.00x5.00mm，頻率156.25MHZ，輸出邏輯LVDS，電壓2.5V，頻率穩定性7ppm，腳位6-SMD，XO時鐘振蕩器（標準），LVDS輸出晶振，LVDS差分晶體振蕩器，石英晶體振蕩器，有源晶振，進口有源晶振，歐美進口晶振，7050mm有源振蕩器，六腳貼片差分晶振，6G無線網絡差分晶振，低電壓差分晶振，低功耗差分晶振，低相位差分晶振，高性能差分晶振，視頻專用晶振，產品很適合用于超聲波/SDH，網絡，SD/HD視頻，測試和測量，時鐘和數據恢復，FPGA/ASIC時鐘生成等領域.
Si530/531 XO有源晶振采用Skyworks Solutions的先進DSPLL®電路以提供高頻下的低抖動時鐘。Si530/531可用具有從10到945MHz的任意速率輸出頻率，并選擇頻率1400兆赫。與傳統XO不同，在傳統XO中每個輸出頻率，Si530/531使用一個固定晶體來提供寬范圍的輸出頻率。這種基于IC的方法允許晶體諧振器，提供卓越的頻率穩定性和可靠性。Si531差分晶振|6G無線網絡晶振|531FC156M250DG|Silicon低電流振蕩器.
Si531差分晶振|6G無線網絡晶振|531FC156M250DG|Silicon低電流振蕩器 參數表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Supply Voltage1 | VDD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | ||||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | ||||||||||||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | ||||||||||||||||||||
| Supply Current | IDD |
Output enabled LVPECL CML LVDS CMOS |
— — — — |
111 99 90 81 |
121 108 98 88 |
mA | ||||||||||||||||||
| Tristate mode | — | 60 | 75 | mA | ||||||||||||||||||||
| Output Enable (OE)2 | VIH | 0.75 x VDD | — | — | V | |||||||||||||||||||
| VIL | — | — | 0.5 | V | ||||||||||||||||||||
| Operating Temperature Range | TA | –40 | — | 85 | ºC | |||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Nominal Frequency1,2 | fO | LVPECL/LVDS/CML | 10 | — | 945 | MHz | ||||||||||||||||||
| CMOS | 10 | — | 160 | MHz | ||||||||||||||||||||
| Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | ||||||||||||||||||
| Temperature Stability1,3 |
–7 –20 –50 |
— |
+7 +20 +50 |
ppm | ||||||||||||||||||||
| Aging | fa | Frequency drift over first year | — | — | ±3 | ppm | ||||||||||||||||||
|
Frequency drift over 20 year life |
— | — | ±10 | ppm | ||||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Total Stability | Temp stability = ±7 ppm | — | — | ±20 | ppm | |||||||||||||||||||
| Temp stability = ±20 ppm | — | — | ±31.5 | ppm | ||||||||||||||||||||
| Temp stability = ±50 ppm | ±61.5 | ppm | ||||||||||||||||||||||
| Powerup Time4 | tOSC | 10 | ms | |||||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| LVPECL Output Option1 | VO | mid-level | VDD– 1.42 | — | VDD– 1.25 | V | ||||||||||||||||||
| VOD | swing (diff) | 1.1 | — | 1.9 | VPP | |||||||||||||||||||
| VSE | swing (single-ended) | 0.55 | — | 0.95 | VPP | |||||||||||||||||||
| LVDS Output Option2 | VO | mid-level | 1.125 | 1.20 | 1.275 | V | ||||||||||||||||||
| VOD | swing (diff) | 0.5 | 0.7 | 0.9 | VPP | |||||||||||||||||||
| CML Output Option2 | VO | 2.5/3.3 V option mid-level | VDD– 1.30 | V | ||||||||||||||||||||
| 1.8 V option mid-level | VDD– 0.36 | V | ||||||||||||||||||||||
| VOD | 2.5/3.3 V option swing (diff) | 1.10 | 1.50 | 1.90 | VPP | |||||||||||||||||||
| 1.8 V option swing (diff) | 0.35 | 0.425 | 0.50 | VPP | ||||||||||||||||||||
| CMOS Output Option3 | VOH | IOH= 32 mA | 0.8 x VDD | VDD | V | |||||||||||||||||||
| VOL | IOL= 32 mA | 0.4 | V | |||||||||||||||||||||
| Rise/Fall time (20/80%) | tR,tF | LVPECL/LVDS/CML | 350 | ps | ||||||||||||||||||||
| CMOS with CL= 15 pF | 1 | ns | ||||||||||||||||||||||
| Symmetry (duty cycle) | SYM |
LVPECL: (diff) LVDS: CMOS: |
VDD– 1.3 V 1.25 V (diff) VDD/2 |
45 | 55 | % | ||||||||||||||||||
Si531差分晶振|6G無線網絡晶振|531FC156M250DG|Silicon低電流振蕩器 尺寸圖
OSC晶振產品特征:
可用于任何速率的輸出
頻率從10兆赫到945兆赫
并選擇1.4 GHz的頻率
集成superior的第三代DSPLL
抖動性能 頻率穩定性比高3倍
基于SAW的振蕩器
內部固定晶振頻率
確保高可靠性和低老化
可用的CMOS、LVPECL、 LVDS和CML輸出
3.3、2.5和1.8 V電源選項
行業標準5 x 7毫米
封裝和引腳排列
無鉛/符合RoHS標準
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| 510BBA148M500AAG | Silicon振蕩器 | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510ABA148M500AAG | Silicon振蕩器 | Si510 | 148.5MHz | 3.3V | ±25ppm |
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| 530AC156M250DG | Silicon振蕩器 | Si530 | 156.25MHz | 3.3V | ±7ppm |
| 531FC156M250DG | Silicon振蕩器 | Si531 | 156.25MHz | 2.5V | ±7ppm |
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| 531AC155M520DG | Silicon振蕩器 | Si531 | 155.52MHz | 3.3V | ±7ppm |
| 530AC155M520DG | Silicon振蕩器 | Si530 | 155.52MHz | 3.3V | ±7ppm |
| 531BC155M520DG | Silicon振蕩器 | Si531 | 155.52MHz | 3.3V | ±7ppm |
| 531FC200M000DG | Silicon振蕩器 | Si531 | 200MHz | 2.5V | ±7ppm |
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| 536EB156M250DG | Silicon振蕩器 | Si536 | 156.25MHz | 2.5V | ±20ppm |
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| 510BBA000149BAG | Silicon振蕩器 | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 511FBA000149BAG | Silicon振蕩器 | Si511 | 74.175824MHz | 2.5V | ±25ppm |
| 510ABA106M250BAG | Silicon振蕩器 | Si510 | 106.25MHz | 3.3V | ±25ppm |
| 511ABA106M250BAG | Silicon振蕩器 | Si511 | 106.25MHz | 3.3V | ±25ppm |
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| 511ABA000149BAG | Silicon振蕩器 | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 510FBA000149BAG | Silicon振蕩器 | Si510 | 74.175824MHz | 2.5V | ±25ppm |
| 510ABA74M2500BAG | Silicon振蕩器 | Si510 | 74.25MHz | 3.3V | ±25ppm |
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| 510ABA106M250AAG | Silicon振蕩器 | Si510 | 106.25MHz | 3.3V | ±25ppm |
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| 510ABA74M2500AAG | Silicon振蕩器 | Si510 | 74.25MHz | 3.3V | ±25ppm |
| 511FBA000149AAG | Silicon振蕩器 | Si511 | 74.175824MHz | 2.5V | ±25ppm |
| 510BBA000149AAG | Silicon振蕩器 | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 510ABA000149AAG | Silicon振蕩器 | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 510FBA74M2500AAG | Silicon振蕩器 | Si510 | 74.25MHz | 2.5V | ±25ppm |
| 511ABA74M2500AAG | Silicon振蕩器 | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 510BBA106M250AAG | Silicon振蕩器 | Si510 | 106.25MHz | 3.3V | ±25ppm |
| 511ABA000149AAG | Silicon Crystal | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 510BBA74M2500AAG | Silicon振蕩器 | Si510 | 74.25MHz | 3.3V | ±25ppm |
| 511FBA74M2500AAG | Silicon振蕩器 | Si511 | 74.25MHz | 2.5V | ±25ppm |
| 510FBA106M250AAG | Silicon振蕩器 | Si510 | 106.25MHz | 2.5V | ±25ppm |
| 511BBA000149AAG | Silicon振蕩器 | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 510ABA155M520BAG | Silicon振蕩器 | Si510 | 155.52MHz | 3.3V | ±25ppm |
| 510FBA155M520BAG | Silicon振蕩器 | Si510 | 155.52MHz | 2.5V | ±25ppm |
| 511FBA155M520BAG | Silicon振蕩器 | Si511 | 155.52MHz | 2.5V | ±25ppm |
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| 511ABA000110BAG | Silicon振蕩器 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
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